si gc12t12 0 l e edited by in fineon technologies , ifag ipc td vls , l7621n , l7621u, l7621f, rev 1 .0 , 27 . 0 6 .20 14 igbt 3 power chip features : ? ? ? ? ? this chip is used for: ? applications: ? chip type v ce i cn die size package s igc12t12 0 l e 12 00v 8 a 3 .5 4 x 3. 5 mm 2 sawn on foil mechanical parameter raster size 3 .5 4 x 3.5 mm 2 emitter pad size (incl. gate pad) 2.028 x 2.028 gate pad size 1.107 x 0.702 area total / active 1 2 .39 / 6.82 thickness 12 0 m wafer size 200 mm m ax.possible chips per wafer 2243 pcs passivation frontside photoimide pad metal 3200 nm alsicu backside metal ni ag C system suitable for epoxy and soft solder die bonding die bond e lectrically conductive glue or solder wire bond al, <500m reject i n k dot s ize ? 0.65mm ; max 1.2mm recommended storage e nvironment s tore in original container, in dry nitrogen, < 6 month at an ambient temperature of 23c g c e
si gc12t12 0 l e edited by in fineon technologies , ifag ipc td vls , l7621n , l7621u, l7621f, rev 1 .0 , 27 . 0 6 .20 14 maximum ratings parameter symbol value unit collector - e mitter voltage , t j =25 ? v ce 1 2 00 v dc collector current, limited by t j max i c 1 ) a pulsed collector current, t p limited by t j max i c , p u l s 24 a gate emitter voltage v ge ? t v j , m a x , t s t g - 55 ... +150 c short circuit data 2 ) v ge = 15v, v cc = 9 00v, t vj = 125 c t p , m a x 10 s reverse bias safe operating area 2 ) (rbsoa) i c , m a x = 16 a, v ce , m a x = 12 00v, t vj,op ? 1 ) depending on thermal properties of assembly 2 ) not subject to production test - verified by design/character ization static characteristics (tested on wafer ), t j =25 ? parameter symbol conditions value unit min. typ. max. collector - e mitter breakdown voltage v (br)ces v ge =0v , i c = 0 .5 ma 1 2 00 v collector - e mitter saturation voltage v ce(sat) v ge =15v, i c =8 a 1.4 1.7 2. 1 gate - e mitter threshold voltage v ge(th) i c =0.3 ma , v ge =v ce 5. 0 5.8 6. 5 zero gate voltage collector current i ces v ce =12 00v , v ge =0v 1.23 a gate - e mitter leakage current i ges v ce =0v , v ge =2 0v 1 2 0 na integrated gate resistor r gint none ? electrical characteristics ( not subject to production test - verified by design / characterization ) parameter symbol conditions value unit min. typ. max. input capacitance c i s s v ce = 25 v , v ge = 0v , f =1 mh z 6 00 pf output ca pacitance c o s s 36 reverse transfer capacitance c r s s 28
si gc12t12 0 l e edited by in fineon technologies , ifag ipc td vls , l7621n , l7621u, l7621f, rev 1 .0 , 27 . 0 6 .20 14 switching characteristics i nductive l oad ( not subject to production test - verified by design / characterization ) parameter symbol conditions 1) value unit min. typ. max. turn - on d elay time t d ( o n ) t j =12 5 ? c v cc = 6 0 0 v, i c =8 a, v ge =0 / 15 v , r g = 8 1 ? 40 s rise time t r 26 turn - off delay time t d ( o f f ) 570 fall time t f 140 1) values also influenced by parasitic l - and c - in measurement and package.
si gc12t12 0 l e edited by in fineon technologies , ifag ipc td vls , l7621n , l7621u, l7621f, rev 1 .0 , 27 . 0 6 .20 14 chip drawing
si gc12t12 0 l e edited by in fineon technologies , ifag ipc td vls , l7621n , l7621u, l7621f, rev 1 .0 , 27 . 0 6 .20 14 fur the r electrical characteristics this chip data sheet refers to the device data sheet igw08t120 description aql 0,65 for visual inspection according to failure catalog ue electrostatic discharge sensitive device according to mil - std 883 test - normen vill ach/prffeld published by infineon technologies ag 81726 munich, germany ? 2014 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or char acteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, inc luding without limitation, warranties of non - infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies off ice ( www. infineon.com ) . warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. the infineon technologies component described in this data sheet may be used in life - support devices or systems and/or automotive, aviation and aerospace applications or systems only with the expres s written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device o r system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endan gered.
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